Symmetric inducting device for an integrated circuit having a ground shield

ABSTRACT

The present invention relates to integrated circuits having symmetric inducting devices with a ground shield. In one embodiment, a symmetric inducting device for an integrated circuit comprises a substrate, a main metal layer and a shield. The substrate has a working surface. The main metal layer has at least one pair of current path regions. Each of the current path region pairs is formed in generally a regular polygonal shape that is generally symmetric about a plane of symmetry that is perpendicular to the working surface of the substrate. The shield is patterned into segments that are generally symmetric about the plane of symmetry. Medial portions of at least some segments of the shield are formed generally perpendicular to the plane of symmetry as the medial portions cross the plane of symmetry.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. application Ser.No. 10/039,200, filed Jan. 4, 2002 now U.S. Pat. No. 6,635,949 andtitled “Symmetric Inducting Device For An Integrated Circuit Having AGround Shield”.

TECHNICAL FIELD

The present invention relates generally to symmetric inducting devicesincorporated in integrated circuits and in particular the presentinvention relates to an integrated circuit having symmetric inductingdevice with a ground shield.

BACKGROUND

Integrated circuits incorporate complex electrical components formed insemiconductor material into a single circuit. Generally, an integratedcircuit comprises a substrate upon which a variety of circuit componentsare formed and connected to form a circuit. Integrated circuits are madeof semiconductor material. Semiconductor material is material that has aresistance that lies between that of a conductor and an insulator. Theresistance of semiconductor material can vary by manyorders-of-magnitude depending on the concentration of impurities ordopants. Semiconductor material is used to make electrical devices thatexploit its resistive properties.

It is desired to design integrated circuits in which electricalcomponents and circuits within the integrated circuit do not interferewith each other. One method of accomplishing this is by includingdifferential circuits. A differential circuit is a circuit that isreally two circuits with opposite voltages and currents. That is, adifferential circuit comprises a first circuit that produces desiredvoltages and currents and a second circuit that is identical to thefirst circuit that produces opposite voltages and currents. The oppositevoltages and currents work to cancel out parasitics that naturally occurbecause of the voltages and currents and helps isolate the circuit fromother circuits in the integrated circuit. Further discussion onparasitics can be found in U.S. Pat. No. 5,717,243, which isincorporated herein by reference.

Symmetric inducting devices are useful in differential circuits.Moreover, it is desired in the art to have a symmetric inducting devicethat has less resistive loss without introducing other parasitics.

For the reasons stated above and for other reasons stated below whichwill become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art foran integrated circuit with a symmetric inductor that has reducedresistive loss with low parasitic characteristics.

SUMMARY

The above-mentioned problems with symmetric inductors in integratedcircuits and other problems are addressed by the present invention andwill be understood by reading and studying the following specification.

In one embodiment, a symmetric inducting device for an integratedcircuit is disclosed. The symmetric inducting device comprises asubstrate, a main metal layer and a shield. The substrate has a workingsurface and a second surface that is opposite the working surface. Themain metal layer has at least one pair of current path regions. Each ofthe current path region pairs is formed in generally a regular polygonalshape. Moreover, each current path region pair is generally symmetricabout a plane of symmetry that is perpendicular to the working surfaceof the substrate such that each current path region pair has one currentpath region on one side of the plane of symmetry and another currentpath region on the other side of the plane of symmetry. The shield ispositioned between the second surface of the substrate and the mainmetal layer. The shield is patterned into segments. The segments ofshield are generally symmetric about the plane of symmetry. In addition,medial portions of at least some segments of the shield are formedgenerally perpendicular to the plane of symmetry as the medial portionscross the plane of symmetry. The shield is more conductive than regionsdirectly adjacent the shield.

In another embodiment, a symmetric transformer for an integrated circuitcomprises a substrate, a main metal layer and a shield. The substratehas a working surface and a second surface that is opposite the workingsurface. The main metal layer has at least one pair of current pathregions. Each of the current path region pairs is formed in generally aregular polygonal shape. Moreover, each current path region pair isgenerally symmetric about a plane of symmetry that is perpendicular tothe working surface of the substrate such that each current path regionpair has one current path region on one side of the plane of symmetryand another current path region on the other side of the plane ofsymmetry. The shield is positioned between the second surface of thesubstrate and the main metal layer. The shield is patterned intosegments. The segments of shield are generally symmetric about the planeof symmetry. Medial portions of most segments of the shield are formedgenerally perpendicular to the plane of symmetry as the medial portionscross the plane of symmetry. In addition, the shield is more conductivethan regions directly adjacent the shield.

In another embodiment, a symmetric inducting device for an integratedcircuit is disclosed. The symmetric inducting device includes asubstrate, a main metal layer and at least one current router. Thesubstrate has a working surface and a second surface opposite theworking surface. The main metal layer is positioned a predetermineddistance from the working surface of the substrate. The main metal layerhaving at least one pair of current path regions. Each current pathregion pair is formed in generally a regular polygonal shape. Moreover,each current path region pair is generally symmetric about a plane ofsymmetry that is perpendicular to the working surface of the substratesuch that each current path region pair has one current path region onone side of the plane of symmetry and another current path region on theother side of the plane of symmetry. The at least one current router isused to selectively route current from one pair of current path regionsto another pair of current path regions. Each current router has anoverpass and an underpass, wherein a width of the overpass is narrowerthan a width of the underpass.

In another embodiment, an inductor for an integrated circuit isdisclosed. The inductor includes a substrate, one or more pairs ofcurrent path regions, one or more current routers and a conductiveshield. The substrate has a working surface and a second surfaceopposite the working surface. The one or more pairs of current pathregions are formed in a first metal layer. Each pair of current pathregions is generally symmetric about a plane of symmetry such that eachcurrent path region pair has one current path region on one side of theplane of symmetry and another current path region on the other side ofthe plane of symmetry. Moreover, each pair of current path regions isformed in a generally regular polygonal shape. The one or more currentrouters are selectively coupled to route current from current pathregions in a pair of current path regions to current path regions inother pairs of current path regions. Each current router has an overpassand an underpass. The conductive shield layer is positioned between thesecond surface of the substrate and the first metal layer. The shieldlayer is patterned into segments to decrease image currents. Thesegments of the shield layer are generally symmetric about the plane ofsymmetry, wherein a portion of most segments of shield adjacent theplane or symmetry are perpendicular to the plane of symmetry.

In another embodiment, a symmetric inducting device for an integratedcircuit is disclosed. The symmetric inducting device includes asubstrate, a main metal layer, a shield and a conducting halo. Thesubstrate has a working surface and a second surface that is oppositethe working surface. The main metal layer has at least one pair ofcurrent path regions. Each current path region pair is formed ingenerally a regular polygonal shape. Moreover, each current path regionpair is generally symmetric about a plane of symmetry that isperpendicular to the working surface of the substrate such that eachcurrent path region pair has one current path region on one side of theplane of symmetry and another current path region on the other side ofthe plane of symmetry. The shield is positioned between the secondsurface of the substrate and the main metal layer. The shield ispatterned into segments. The segments of shield are generally symmetricabout the plane of symmetry. Moreover, the shield is more conductivethan regions directly adjacent the shield. The conducting halo extendsaround an outer perimeter of the shield. The halo is furtherelectrically connected to each section of shield. Moreover, the halo hasat least one gap and is symmetric about the plane of symmetry. Eachsection of shield is electrically connected to the halo.

In another embodiment, an inducting device for an integrated circuit isdisclosed. The inducting device includes a substrate, a main metallayer, a shield layer, at least one current router and one or morecapacitor compensation sections for each current router. The substratehas a working surface and a second surface opposite the working surface.The main metal layer is formed a select distance from the workingsurface of the substrate. The main metal layer has one or more pairs ofcurrent path regions formed therein. The shield layer is positionedbetween the second surface of the substrate and the main metal layer.The shield layer is more conductive than regions directly adjacent theshield layer. The at least one current router couples a current pathregion in one pair of current path regions to a current path region inanother pair of current path regions. Each current router has anoverpass and an underpass. Each capacitor compensation section iselectrically connected to a current path region that is coupled to anoverpass of an associated current router, wherein each capacitorcompensation section approximates parasitic capacitance of an underpassof the associated current router to the shield layer.

In another embodiment, a current router for an inducting device in anintegrated circuit is disclosed. The current router comprises one ormore overpasses to electrically connect select current path regions ofthe inducting device. The one or more overpasses are made from aconductive layer having a first sheet resistance. Each overpass has afirst width. The current router also has one or more underpasses toelectrically connect different select current path regions. The one ormore underpasses are made from a conducting layer having a seconddifferent sheet resistance. Each underpass has a second different width,wherein the resistance in each overpass is approximately equal to theresistance in each associated underpass.

In another embodiment, a patterned shield layer having a plurality ofsegments of shield for an inducting device in an integrated circuit isdisclosed. The patterned shield layer includes a plurality of conductivestraps. Each conductive strap is electrically connected to a selectedsegment of shield to provide an alternative path of reduced resistancefor the associated segment of shield.

In another embodiment, a method of forming an inductive device in anintegrated circuit. The method comprising forming a shield layer.Patterning the shield layer into sections of shield that are generallysymmetric to a plane of symmetry, wherein portions of some of thesections of shield are patterned perpendicular to the plane of symmetryas they cross the plane of symmetry. Forming a layer of dielectricoverlaying the sections of shield. Depositing a first layer of metaloverlaying the dielectric layer. Patterning the first layer of metal tofrom one or more pairs of current path regions that are generallysymmetric about the plan of symmetry such that each current path regionpair has one current path region on one side of the plane of symmetryand another current path region on the other side of the plane ofsymmetry.

In another embodiment, a method of forming a symmetric inducting devicefor an integrated circuit is disclosed. The method comprising patterningone or more pairs of current path regions in a main metal layer thatoverlays a working surface of a substrate of an integrated circuit,wherein each pair of current path regions are patterned to be generallysymmetric about a plane of symmetry that is perpendicular to the workingsurface of the substrate. Forming current routers having an overpass andan underpass to selectively couple one current path region in a pair ofcurrent path regions to another current path region in another pair ofcurrent path regions, wherein a width of the overpass is formed lessthan the width of the underpass to approximate resistances through theoverpass and the underpass.

In another embodiment, a method of forming a symmetric inducting devicefor an integrated circuit is disclosed. The method comprises, forming ashield layer and patterning the shield layer to form sections of shieldthat are generally symmetric to a plane of symmetry, wherein at least amid portion of most sections of shield are perpendicular to the plane ofsymmetry. Metal straps are formed from at least one interior metallayer, wherein the at least one interior metal layer is formed a selectdistance from the sections of shield. Termination ends of each of themetal straps are coupled to an associated select section of shield,wherein each strap extends along the mid portion of an associated selectsection of shield. The method further includes forming a plurality ofcurrent path regions from a main metal layer. The at least one interiormetal layer is positioned closer to the shield layer than to the mainmetal layer. Moreover, the plurality of the current path regions aregenerally symmetric to the plane of symmetry.

In another embodiment, a method of forming an inductive device in anintegrated circuit is disclosed. The method comprising, forming a shieldlayer. Patterning the shield layer into segments of shield that aresymmetric about a plane of symmetry. Forming a conductive halo apredetermined distance from shield layer, wherein the halo is formed toextend around an outer perimeter of the segments of shield. Coupling theconductive halo to each of the sections of shield. Patterning at leastone gap in the conducting halo, wherein the conducting halo is symmetricabout the plane of symmetry. Forming a main metal layer, the halo ispositioned between the main metal layer and the shield layer. Patterningthe main metal layer to form at least one pair of generally regularpolygonal current path regions wherein the at least one pair of currentpath regions are generally symmetric about the plane of symmetry.

In another embodiment, a method of forming a current router to coupledselect current path regions in an integrated circuit is disclosed. Themethod comprising forming a first conductive layer having a first sheetresistance. Patterning the first conductive layer to form one or moreunderpasses having a first width. Forming a second conductive layerhaving a second different sheet resistance a select distance from thefirst conductive layer. Patterning the second conductive layer to formone or more overpasses having a second different width, wherein theresistance in each overpass is generally equal to the resistance in anassociated underpass.

In another embodiment, a method of forming an inducting device, themethod comprising forming a shield layer. Forming a main metal layer aselect distance from the shield layer. Patterning the main metal layerinto one or more current path regions. Forming one or more currentrouters to couple current path regions to each other, wherein eachcurrent router having an overpass and an underpass. Forming one or morecapacitor compensation sections for each current router. Coupling eachcapacitor compensation section to an overpass of an associated currentrouter to approximate parasitic capacitance of an underpass of theassociated current router to the shield.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention can be more easily understood and furtheradvantages and uses thereof more readily apparent, when considered inview of the description of the preferred embodiments and the followingfigures in which:

FIG. 1 is a top-view of a symmetric center tapped inductor of oneembodiment of the present invention;

FIG. 1A is a top view of current path regions of one embodiment of thepresent invention;

FIG. 1B is a top view of a symmetric center-tapped inductor of oneembodiment of the present invention illustrating shield and straplayers;

FIG. 1C is a top-view of another embodiment of a shield layer of thepresent invention;

FIG. 1D is a top-view of yet another embodiment of a shield layer havingstraps of one embodiment of the present invention;

FIG. 2 is a cross-sectional cut-out view of an area defined by line A_Bof a symmetric center-tapped inductor of one embodiment of the presentinvention;

FIG. 2A is a cross-sectional cut-out view of an area defined by line A-Bof a symmetric center-tapped inductor of another embodiment of thepresent invention;

FIG. 2B is a cross-sectional cut-out view of an area defined by line A-Bof a symmetric center-tapped inductor of another embodiment of thepresent invention;

FIG. 2C is a cross-sectional cut-out view of an area defined by line A-Bof a symmetric center-tapped inductor of another embodiment of thepresent invention;

FIG. 2D is a cross-sectional cut-out view of an area defined by line A-Bof a symmetric center-tapped inductor of yet another embodiment of thepresent invention;

FIG. 3 is a cut-out view of a cross-sectional area defined by line C_Dof a symmetric center-tapped inductor of one embodiment of the presentinvention;

FIG. 4 is cut-out view of a cross-sectional area defined by line E_F ofa symmetric center-tapped inductor of one embodiment of the presentinvention;

FIG. 4A is a top view of one embodiment of a current router of thepresent invention;

FIGS. 5A-5E are cut-out cross-sectional views illustrating the formationof the area defined by line E_F;

FIG. 6 is a top view of a symmetric center-tapped inductor of anotherembodiment of the present invention;

FIG. 7 is a cut-out view of a cross-sectional area defined by line G_Hof a symmetric center-tapped inductor of one embodiment of the presentinvention;

FIG. 8 is a top view of a symmetric center-tapped inductor of anotherembodiment of the present invention;

FIG. 9 is a top view of one embodiment of current path regions havingfour leads of the present invention; and

FIG. 10 is a top view of one embodiment of the current path regions in asquare shape of the present invention.

In accordance with common practice, the various described features arenot drawn to scale but are drawn to emphasize specific features relevantto the present invention. Reference characters denote like elementsthroughout Figures and text.

DETAILED DESCRIPTION

In the following detailed description of the preferred embodiments,reference is made to the accompanying drawings, which form a parthereof, and in which is shown by way of illustration specific preferredembodiments in which the inventions may be practiced. These embodimentsare described in sufficient detail to enable those skilled in the art topractice the invention, and it is to be understood that otherembodiments may be utilized and that logical, mechanical and electricalchanges may be made without departing from the spirit and scope of thepresent invention. The following detailed description is, therefore, notto be taken in a limiting sense, and the scope of the present inventionis defined only by the claims and equivalents thereof.

Embodiments of the present invention relate to integrated circuits thatinclude symmetric inducting devices with reduced resistance andparasitics. In the following description, the term substrate is used torefer generally to any structure on which integrated circuits areformed, and also to such structures during various stages of integratedcircuit fabrication. This term includes doped and undopedsemiconductors, epitaxial layers of a semiconductor on a supportingsemiconductor or insulating material, combinations of such layers, aswell as other such structures that are known in the art. Terms ofrelative position as used in this application are defined based on aplane parallel to the conventional plane or working surface of a waferor substrate, regardless of the orientation of the wafer or substrate.The term “horizontal plane” or “lateral plane” as used in thisapplication is defined as a plane parallel to the conventional plane orworking surface of a wafer or substrate, regardless of the orientationof the wafer or substrate. The term “vertical” refers to a directionperpendicular to the horizontal. Terms, such as “on”, “side” (as in“sidewall”), “higher”, “lower”, “over,” “top” and “under” are definedwith respect to the conventional plane or working surface being on thetop surface of the wafer or substrate, regardless of the orientation ofthe wafer or substrate.

The present invention can be applied to symmetric inducting deviceshaving inductive sets of rings that are typically formed in a metallayer of an integrated circuit. Examples of this type of device are2-lead symmetric inductors, 3-lead symmetric center-tapped inductors,4-lead symmetric transformers, etc. Referring to FIG. 1, a center-tappedinductor 100 formed in an integrated circuit, of one embodiment of thepresent invention, is illustrated. As illustrated, the center-tappedinductor 100 has a first, second, third and fourth current path regions120, 122, 124 and 126 respectfully. The current path regions 120, 122,124 and 126 are formed generally in pairs of regular polygonal shapes asillustrated in FIG. 1. In particular, embodiments of the presentinvention include pairs of current path regions in the form of regularpolygonal shapes such as square, octagonal, hexagonal and circular.

In one embodiment, the first, second, third and fourth current pathregions 120, 122, 124 and 126 are patterned from a layer of metal. Anillustration of the current path regions 120, 122, 124 and 126 areillustrated in FIG. 1A. In operation, the current path starts at apositive lead 129 (first lead 129) of the first current path region 120.The current then flows along the first current path region 120, thecurrent path designated by 101A, 101B, 101C, 101D and 101E. The currentthen enters a current router 128 that directs the current to the secondcurrent path region 122. The current then flows along the second currentpath region 122, the current path designated by 101F, 101G, 101H, 101Iand 101Jb. This is the halfway point of the current path and should bevery close to AC ground.

The halfway point of the current path is also the point where thecurrent passes a plane of symmetry 109 of the symmetric center-tappedinductor 100. The plane of symmetry 109 is a plane that extendsperpendicular from a working surface of the symmetric center-tappedinductor 100 and is represented by the line 109 in the plan view (topview) of FIGS. 1 and 1A. A center lead 110 is attached at the plane ofsymmetry. In one embodiment, the center lead 110 is coupled to anexternal AC ground. The current path continues by flowing through thethird current path region 124, the current path designated by 101Jt,101K, 101L, 101M and 101 Nt. The current router 128 then directs thecurrent to the fourth current path region 126. The current then flowsthrough the fourth current path region 126, the current path designatedby 101Nb, 101O, 101P, 101Q and 101R. The current then enters a negativelead 131 (second lead 131).

Although lead 129 and lead 131 of FIGS. 1 and 1A are respectfullyreferred to as the positive and negative lead, it will be understood inthe art that since we are dealing with an AC current, the actual voltageon each of the leads 129 and 131 will alternate between positive andnegative and that the designation of lead 129 as positive lead 129 andlead 131 as negative lead 131 is for illustration purposes only.

The center lead 110 can be thought of as a center-tap to an inductor. Infact, the symmetric center-tapped inductor 100 of the present inventioncan be referred to as a center-tap to an inductor 100. Advantageously,differential symmetric center-tapped inductor 100 produces moreinductance for given parasitic resistance and capacitance than separateinductor circuits. In addition, differential symmetric center-tapinductor 100 is better isolated from a substrate upon which it isformed. For example, if only one half of symmetric center-tappedinductor 100 was used, an AC voltage would be capacitively generatedinto the substrate which would couple to other circuits or generatelosses that will effectively increase resistance and reduce the qualityfactor (Q) of the inductor. It could also increase phase noise. However,with differential symmetric center-tapped inductor 100 these problemsare reduced because as one of the circuits of symmetric center-tappedinductor pushes negative voltage down to the substrate the other of thecircuits pulls an opposite positive voltage up from the substrate.Accordingly, the voltages cancel out. In fact, the (AC) voltages cancelto approximately zero right along the plane of symmetry. Therefore, theplane of symmetry has a voltage that is always at approximately ACground, and the terms “plane of symmetry” and “AC ground” can be usedinterchangeably.

The symmetric center-tapped inductor 100 also has a ground shield 102,as illustrated in FIG. 1. The shield 102 helps cancel out the voltagesand is formed in a layer below the symmetric center-tapped inductor 100.In particular, the shield 102 reduces resistance and parasitics toprovide a high Q factor. In addition, the shield 102 helps provideisolation from the rest of the circuits in the integrated circuit. Theshield 102 is a layer of material that is more conductive than any ofthe material directly adjacent it. The ground shield 102 of thesymmetric center-tapped inductor of FIG. 1 is also illustrated in FIG.1B.

In order to reduce eddy or image currents in the shield 102, the shieldis patterned with shield gaps 103 to form sections of shield 102.Without the gaps 103, the conductive shield 102 would allow imagecurrents to flow in the shield and because these image currents arelossy, the Q of the symmetric center-tapped inductor would be destroyed.As illustrated in FIGS. 1 and 1D in this embodiment, some of the gaps103 are positioned parallel with each other and perpendicular to theplane of symmetry 109. The remaining gaps 103 have portions that areparallel to each other and perpendicular to the plane of symmetry 109.End portions of these gaps 103 extended at predetermined angles from theportions that are perpendicular to the plane of symmetry 109. Statedanother way, some segments of shield 102 have medial portions 170 thatare perpendicular to the plane of symmetry 109 as they cross the planeof symmetry and end portions 171 that extend at predetermined anglesfrom the medial portion 170. This is illustrated in FIGS. 1 and 1B. As aresult of this arrangement, the sections of shield 102 are bilaterallysymmetric about the plane of symmetry 109. Moreover, in thisarrangement, very short current paths to the A.C. ground (plane ofSymmetry) are achieved in each segment of shield 102. Of course theshortest path to the AC ground (or the plane of symmetry 109) would beprovided by a series of vertical shield segments. However, that does notnecessarily result in the lowest resistance. Referring to the right sideof FIG. 1, charged pushed down by the positive section 101D of currentregion 120 first travels inwardly past negative section 101M of currentregion 124 where some of the change gets canceled out. From this point,there is less total current than has to travel to the plane of symmetry,and this further reduces the total resistive loss in the shield 102. Byadding the angles to the shield segments 102 (or to the shieldpatterning), the coupling between positive region 101D and negativeregion 101M is optimized so that the overall shield current isminimized.

The shield 102 helps the current get from the positive side to thenegative side. For example, referring back to FIG. 1, if a positivevoltage is applied to main metal, layer lead 129 of the symmetriccenter-tapped inductor 100, a charge is pushed down capacitively intothe shield 102. The charge will travel in the shield until it gets tothe opposite side of the symmetric center-tapped inductor 100, which inthis case is under lead 131. At this point, the charge will be pulledback up to the main metal layer at lead 131. Similarly, if a positivevoltage is positioned at 101C, charge will be capacitively pushed downto the shield 102. The charge will then travel in the shield 102 untilit reaches the opposite side of the symmetric center-tapped inductor100, which in this case is under 101P. At this point, the charge will bepulled back up to the main metal layer in current path region 126.

Another embodiment of a shield 180 is illustrated in FIG. 1C. As in theprevious embodiment, sections of shield are patterned by gaps 103.Moreover, as illustrated, portions of some of the sections of shield 103are perpendicular to the plane of symmetry 109 as the portions cross theplane of symmetry 109. This design allows for a very low resistance pathto AC ground (the plan of symmetry 109).

Referring back to FIG. 1, in the embodiment illustrated, conductivestraps 105 are coupled (electrically connected) to the shield 102 tofurther reduce the resistance of the shield 102. The conductive straps105 are selectively positioned perpendicular to the plane of symmetry109 and are coupled to an associated segment of shield 102. In thisembodiment, a charge may either travel through the shield 102 or it maytravel through an associated strap 105 for a distance in reaching theopposite side of the symmetric center-tapped inductor 100. In oneembodiment, the terminal ends 104 of each of the conductive straps 105,which are coupled to an associated segment of shield 102, are wider thana medial portion 111 of the strap 105. This provide a greater area tocouple to the respective shield 102 segments while limiting theconduction of the straps 105 through the medial portion 111 by limitingits width. The reduced widths of the medial portion 111 of the straps105 ensure that parasitic eddy currents in the straps 105 are negligiblysmall. In embodiments of the present invention, the straps 105 are madefrom a conductive layer that is more conductive than the segments ofshield 102. In one embodiment, the straps 105 are made of metal and canbe referred to as metal straps 105. Moreover, in yet another embodiment,each strap 105 is formed closer to its associated shield 102 segmentthan a main metal layer in which the current path regions 120, 122, 124and 126 are formed.

In one embodiment, straps 105 are not positioned directly under currentpath regions 120, 122, 124 and 126 to avoid the addition of capacitance.However, in the embodiment of FIG. 1, one strap 115 is located under thesecond and third current path regions 122 and 124 adjacent the line ofsymmetry. This strap 115 helps reduce the resistance in the shield 102at this location. Moreover, since the strap 115 and the shield at thislocation is essentially at AC ground the additional capacitance formedby the addition of strap 115 does not have a significant effect ondevice performance.

Since the AC voltage is approximately at zero at the line of symmetry109 it is unnecessary to hook the shield 102 to an external AC ground.An advantage to this embodiment is that the shield 102 does not have tobe coupled to any other layer of conductive material. In other circuitshowever, there may be an advantage to having the shield 102 coupled toAC ground. Therefore, in another embodiment, a conductive path 133 orground line 133 runs along the plane of symmetry 109 and is coupled(electrically connected) to, at least most, of the segments of theshield 102. This is illustrated in FIG. 1D. As illustrated in FIG. 1D,the sections of shield 102 are coupled to the conductive path 133 withconnections or vias 135. The conductive path 133 runs along the plane ofsymmetry. Moreover in one embodiment, the conductive straps 105 are alsocoupled (electrically connected) to the conductive path 133. In oneembodiment, the conductive path 133 is only connected to the shield 102.In another embodiment, the conductive path 133 is also coupled tocenter-tap 110 which is formed from the current path regions of the mainmetal layer as illustrated in FIG. 1A. In yet another embodiment,conductive path 133 is coupled to a separate external AC ground. In oneembodiment, the conductive path 133 is made from a metal layer and canbe referred to as a metal line 133. In still another embodiment, theconductive path 133 is made from the same metal layer the shield 102 ismade from.

To provide a better understanding of how the present invention isconstructed, cross-sectional views of lines A_B, C_D and F_E of FIG. 1,are illustrated in FIGS. 2-4 respectfully. Referring to FIG. 2, across-sectional view of line A_B is illustrated. As illustrated in thisview, the symmetric center-tapped inductor 100 includes a substrate 119and a dielectric layer 123. The substrate 119 is the substrate uponwhich the integrated circuit is formed. This view also illustratessections of shield 102, straps 105 (the medial portions 111 of straps105) and the gaps 103 positioned between the sections of shield 102. Thesections of shield 102 are positioned in the dielectric layer 123. Alsoshown in this view, is the third current path region 124 (where thecurrent path travels from 101Jb to 101Jt), which is made of a layer ofmetal and is separated from the shield 102 a predetermined distance bythe layer of dielectric 123. Moreover, the cross-sectional view alongline A_B of FIG. 2 is along the plane of symmetry. The plane of symmetryis perpendicular to the working surface 121 of the substrate 119.

The shield segments 102 can be positioned in different locations betweenthe main metal layer that form the current path regions (which includescurrent path region 124) and a bottom surface 137 of the substrate 119.For example in the embodiment of FIG. 2, the shield segments 102 areformed in the dielectric layer 123. In another embodiment, the shieldsegments 102 are formed on the surface 121 of the substrate 119. Thisembodiment is illustrated in FIG. 2A. In yet another embodiment, theshield segments 102 are formed in the substrate 119. This embodiment isillustrated in FIG. 2B.

Further, in one embodiment (illustrated in FIG. 2C), current path region124 is positioned between the shield segments 102 and the substrate 119.That is, in this embodiment, the main metal layer, upon which currentpath region 124 is formed, is positioned between the shield segments 102and the substrate 119. Moreover, in yet another embodiment (illustratedin FIG. 2D), current path region 124 is positioned between two shieldsegment 102 layers. That is, in this embodiment, the main metal layer,upon which current path region 124 is formed, is positioned betweenfirst and second shield segment layers 181 and 182 that form the shieldsegments 102. Also illustrated in FIG. 2D are the conductive straps 105.

Referring to FIG. 3, a cross-sectional view of line C_D is illustrated.This view illustrates how a strap 105 is coupled to a section of theshield 102. As illustrated, in this embodiment the shield 102 is formedin a dielectric layer 123. The strap 105 is also formed in thedielectric layer 123 a predetermined distance from the shield 102. Inone embodiment the straps 105 are made from one or more inner metallayers. That is, metal layers that are positioned between the sectionsof shield and the main metal layer. In another embodiment, the straps105 are a layer of doped material than is more conductive than theshield 102. As illustrated in FIG. 3, strap 105 is coupled to the shield102 by contacts 126 or vias 126.

Referring to FIG. 4, a cross-sectional view of line E_F is illustrated.This view illustrates current router 128. Current router 128 includes anoverpass 130 and an underpass 132. As illustrated, the first currentpath region 120 is coupled to an underpass 132 by contacts 134 (or vias134). The second current path region 122 is coupled the underpass 132 bycontacts 136 (or vias 136). The overpass 130 is spaced from theunderpass 132 a predetermined distance by dielectric layer 123.

The use of the current router 128 can lead to a loss of symmetry in thesymmetric inducting devices. However, the present invention uses acouple of techniques to minimize the loss of symmetry caused by thecurrent router 128. A first loss of symmetry is present when theoverpass 130 and underpass 132 have different resistances. This isgenerally due to a difference in the sheet resistance in the metallayers upon which the overpass 130 and underpass 132 are formed.Typically the top or main metal layer (the metal layer used to form thefirst, second third, fourth current path regions and the overpass 130)has less sheet resistance than the layer of metal used to form theunderpass 132. This results in a resistance in the underpass 132 beinggreater that the overpass 130. In one embodiment of the presentinvention, the loss of symmetry due to the difference in resistance inthe overpass 130 and the underpass 132 is reduced by proportionallymaking the underpass 132 wider and the overpass 130 narrower.

The width of the underpass 132 and the overpass 130 of current router128 is illustrated in FIG. 4A. In particular, OW denotes the width ofthe overpass 130 and UW denotes the width of the underpass 132. Furtherillustrated in FIG. 4A, current path regions 120 and 122 are narrowerthan associated underpass 132 and current path regions 124 and 126 arewider than associated overpass 130 in this embodiment. In oneembodiment, the width of the overpass 130 is less than half the width ofassociated current path regions 124 and 126. Also illustrated in FIG. 4Aare contacts 136 (or vias 136) that couple current path region 122 tothe underpass 132 and contacts 134 (or vias) that couple current pathregion 120 to underpass 132.

In another embodiment, where the metal layer used to form the underpass132 has less sheet resistance than the metal layer used to form theoverpass 130, the resulting difference in resistance in the overpass 130and the underpass 132 is reduced by proportionally making the overpass130 wider and the underpass 130 narrower (not shown). In yet anotherembodiment of a current router that has its overpass wider than anassociated underpass, the width of the overpass is also wider thanassociated current path regions (current path regions that are coupledtogether by the overpass). In addition, in this embodiment, the width ofthe underpass is narrower than associated current path regions (currentpath regions coupled together by the underpass). Moreover, in oneembodiment, the width of the underpass is less than half the width ofassociated current path regions. If, however, the sheet resistance inthe overpass 130 and the underpass 132 are generally equal, the width ofthe overpass 130 and the underpass 132 will also be generally equal.

The underpass 132 being closer to the shield 102 than the overpass 130causes another loss of symmetry. Because of this, the underpass 132provides more capacitance to the shield than the overpass 130. In oneembodiment, the loss of symmetry due to this added capacitance to theshield by the underpass 132 is reduced by adding additional capacitancein the path that uses the overpass 130. In particular, referring to FIG.4A, in one embodiment the added capacitance is accomplished by couplingthe respective third and fourth current path regions 124 and 126 torespective sections of metal layer 107 that are generally located at thesame vertical depth as the underpass 132. These sections of metal layer107 can be referred to as capacitor compensation sections 107. Asillustrated in FIG. 4A, the capacitor compensation sections 107 arepositioned approximate opposite sides of the current router 128.Moreover, as FIG. 4A illustrates one or more pairs of capacitorcompensation sections 107 can be used. In addition, in this embodimentthe area of the combined compensation sections 107 is approximately thearea of the underpass 132 so as to achieve generally the samecapacitance. Although, it may be preferred that the capacitorcompensation sections 107 be formed in pairs, this does not have to bethe case in all situations. In fact, in one embodiment of the presentinvention only one capacitor compensation section 107 is used percoupled current path regions.

In other embodiments, the capacitor compensation sections 107 are formedat a vertical depth that is not the same as the underpass 132. In theseembodiments, the size of the compensation regions is adjusted toapproximate the capacitance of the underpass 132. In one embodiment, thecapacitor compensation sections 107 are formed in a layer that isbetween the underpass 132 and the shield 102. The capacitor compensationsections 107 of this embodiment will have proportionally less area thanwould be required if they were formed at the same level as the underpass132. In another embodiment, the capacitor compensation sections 107 areformed in a layer between the main metal layer (the layer the currentpath regions are formed) and the underpass 132. In this embodiment, thecapacitor compensation sections 107 will have proportionally more areathan would be required if they had been formed at the same level as theunderpass 132.

To better understand the formation of the present invention, FIGS. 5A-5Eare provided. FIGS. 5A-5D illustrate the formation of symmetriccenter-tapped inductor 100 along line E_F. Referring to FIG. 5A, uponthe surface 150 of the substrate 119 a shield layer is formed. Thesurface 150 of the substrate 119 can also be referred to as the workingsurface 150. As stated above, the shield layer is a layer that is moreconductive than the material that surrounds it. For example, the shieldlayer may be a layer of metal deposited on the surface 150 of thesubstrate 119 or a doped layer formed in the substrate 119 by theinjection of dopants through the working surface 150. The shield layeris then patterned to form the sections of shield 102. One method ofpatterning the shield 102 into sections is by masking the shield layerand then etching the gaps 103. A first layer of dielectric 140 is thenformed overlaying the shield 102. The first layer of dielectric 140 alsofills in the gaps 103. A first layer of metal 152 is then depositedoverlaying the first layer of dielectric 140.

As illustrated in FIG. 5B, the first metal layer 152 is then etchedusing a mask to form the underpass 132. A second dielectric layer 142 isthen formed overlaying the underpass 132 and first layer of dielectric140. This is illustrated in FIG. 5C. The first and second dielectriclayers 140 and 142 may be formed by a variety of methods such asthermally grown or deposited. Moreover, the first and second dielectriclayers 140 and 142 are represented by dielectric layer 123 of FIG. 4.Referring back to FIG. 5C, the second dielectric layer 142 is thenmasked and etched to form vias 146. Contacts 134 and 136 are then formedin the vias, as illustrated in FIG. 5D. One method of forming thecontacts 134 and 136 in the vias is by the dual Damascene process. Asecond metal layer 148 is deposited at the same time the contacts 134and 136 are formed.

Referring to FIG. 5E, the second metal layer 148 is then masked andetched to form the first and second current path regions 120 and 122 andthe overpass 130. As illustrated, contacts 136 couple the second currentpath region 122 to the underpass 132 and contacts 134 couple the firstcurrent path region 120 to the underpass 132. FIG. 5E also illustratesthat a sealing layer of passivation 160 is typically then formed toprotect the circuit. The passivation layer 160 overlays all the circuitsformed in the integrated circuit. Although the layers of metal anddielectric have been described as being patterned by a mask and etchtechnique, it will be understood in the art that other patterningtechniques could be used to achieve similar results and that the presentinvention is not limited to mask and etch techniques.

Moreover, although FIG. 1 illustrates an embodiment of the presentinvention as being in the shape of an octagon, embodiments of thepresent invention could have many different (approximately) regularpolygonal shapes, such as a square or circle, and the present inventionis not limited to the shape of an octagon. In addition, embodiments ofthe present invention can have more than two rings of current pathregions 120, 122, 124 and 126. In fact, an embodiment of a symmetriccenter-tapped inductor 200 having more than two rings of current pathregions is illustrated in FIG. 6. As illustrated in FIG. 6, in thisembodiment two current routers 210 and 212 are used to direct currentaround the rings of current path regions 220, 222, 224, 226, 227 and228. The current path regions 220, 222, 224, 226, 227 and 228 and thecurrent routers 210 and 212 are formed as describe above with regard tosymmetric center-tapped inductor 100 of FIG. 1.

FIG. 6 also illustrates an alternative embodiment of a shield layer 202.In this embodiment, the shield 202 is a doped layer in the semiconductorand is patterned by trenches 204 to form sections of shield 202. Acapacitive charge created by a current in one of the current pathregions 220, 222, 224, 226, 227 and 228 is intercepted by an associatedsection of the shield 202. The respective section of shield 202 thengenerally radially directs the charge to a metal halo 206 that ispositioned to encircle an outer perimeter of the symmetric center-tappedinductor 200. The halo 206 is coupled to each segment of shield 202 toreceive the charge.

Referring to FIG. 7, a cross sectional view at line G_H of FIG. 6 isillustrated. Implanting dopants into the substrate 240 to create aconductive layer that is more conductive than adjacent layers forms theshield 202, of this embodiment. As illustrated, trenches 204 are thenetched and filled with insulating material in the substrate 240. Thetrenches.204 are used to separate the shield 202 into regions. The halo206 is coupled to the shield 202 by contact 210. The halo 206, thecontact 210, the shield 202, and the trenches 204 are overlayed bydielectric layer 242. Current path regions 220, 227 and 224 aredeposited to overlay the dielectric layer 242.

In the embodiment illustrated in FIG. 6, the halo 206 is formed havingtwo gaps 230. These gaps 230 are positioned so each segment of halo 206is symmetric about the plane of symmetry 250. When a charge enters aportion of the halo 202 it moves in the halo 202 to a position oppositeplane of symmetry 250 where it is pulled up out of the halo 206 assimilarly describe above for symmetric center-tapped inductor 100. Inthis embodiment, the shield 202 and the halo 206 are not coupled to anexternal AC ground. In another embodiment that has its shield and halocoupled to an external AC ground, only one gap 230 is formed in the halo206 and the gap 230 is located at the line of symmetry 250. Thisembodiment is illustrated in FIG. 8. In another embodiment, acombination of the gaps in the halos illustrated in FIGS. 6 and 8 areimplemented. In this embodiment, the halo has a first gap positioned atthe plane of symmetry, a second gap positioned on a first side of theplane of symmetry and a third gap positioned on a second side of theplane of symmetry. Moreover, in this embodiment, the second and thirdgaps are symmetric with respect to each other about the plane ofsymmetry.

Another embodiment of current path regions 251 t, 251 b, 252 t, 252 b,254 t and 254 b of a symmetric inducting device is illustrated in FIG.9. In this embodiment, three pairs of current path regions 251(t and b),252(t and b) and 254(t and b) are formed in a generally regularpolygonal shape, which in this case is an octagon. Each pair of currentpath regions 251(t and b), 252(t and b) and 254(t and b) is generallysymmetric about a plane of symmetry denoted by line 253 in FIG. 9. Thisembodiment includes a first and second current routers 256 and 258 toselectively coupled current between current path regions 251, 252 and254. Current routers 256 and 258 of this embodiment have underpassesthat are wider than the overpasses to achieve similar resistance pathsthrough the overpasses and the underpasses. This embodiment alsoincludes first (positive) and second (negative) leads 260 and 262 tocouple an external AC voltage across. Also included in this embodiment,is third and fourth leads 264 and 266 which are coupled on oppositesides of the plane of symmetry 253 to current path region 254 whichsupplies additional leads for circuit designs.

Yet another example of an embodiment of pairs of current path regions268(t and b), 270(t and b), 272(t and b), 274(t and b), 276(t and b),278(t and b) and 280(t and b) of the present invention is illustrated inFIG. 10. In this embodiment, each pair of current path regions 268(t andb), 270(t and b), 272(t and b), 274(t and b), 276(t and b), 278(t and b)and 280(t and b) form a generally regular polygonal shape, which in thiscase is a square. Each pair is generally symmetric about a plane ofsymmetry denote by line 271 of FIG. 10. This embodiment has first andsecond current routers 282 and 284 that are formed with two overpassesand two underpasses as illustrated in FIG. 10. With the current routers282 and 284, single current routers of embodiments of the presentinvention are doubled up to form the double current routers 282 and 284.For example, double current router 282 couples current path region 270 tto current path region 274 b and current path region 272 t to currentpath region 276 b. In the embodiment shown in FIG. 10 the underpasses ofcurrent routers 282 and 284 are wider than the overpasses to achievesimilar resistance paths through the overpasses and the underpasses.Also included is current router 286 that has a single overpass and asingle underpass. Moreover, this embodiment includes first and secondleads 288 and 290 and third and fourth leads 292 and 294. The first andsecond leads 288 and 290 are coupled on opposite sides of the plane ofsymmetry 271 to current path region pair 268. The third and fourth leads292 and 294 are coupled on opposite sides of the plane of symmetry 271to current path region 270.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement, which is calculated to achieve the same purpose,may be substituted for the specific embodiment shown. This applicationis intended to cover any adaptations or variations of the presentinvention. Therefore, it is manifestly intended that this invention belimited only by the claims and the equivalents thereof.

1. A method of forming an inductive device in an integrated circuitcomprising: forming a shield layer; patterning the shield layer intosections of shield that are generally symmetric to a plane of symmetry,wherein portions of some of the sections of shield are patternedperpendicular to the plane of symmetry as they cross the plane ofsymmetry; forming a layer of dielectric overlaying the sections ofshield; depositing a first layer of metal overlaying the dielectriclayer; and patterning the first layer of metal to form one or more pairsof current path regions that are generally symmetric about the plane ofsymmetry such that each current path region pair has one current pathregion on one side of the plane of symmetry and another current pathregion on the other side of the plane of symmetry.
 2. The method ofclaim 1, wherein each one of the one or more pairs of current pathregions are patterned to form a generally regular polygonal shape. 3.The method of claim 1, further comprising: forming conductive strapsbetween the shield layer and the first layer of metal approximate selectsections of shield; and forming a connection between the conductivestraps and the select sections of shield to provide an alternate lessresistive path for each of the select sections of shield, wherein theconductive straps are coupled across a length of the select sections ofshield.
 4. The method of claim 1, further comprising: coupling theshield to an external AC ground along the plan of symmetry.
 5. Themethod of claim 1, wherein forming the layer of shield furthercomprising: depositing a third metal layer; and patterning the thirdmetal layer to form the sections of shield.
 6. The method of claim 5,wherein the third metal layer is deposited on a working surface of asubstrate.
 7. The method of claim 5, wherein the third metal layer isdeposited on a layer of dielectric that is formed on a working surfaceof a substrate.
 8. The method of claim 1, wherein forming the layer ofshield further comprising: doping a substrate to form a conducting layerthat is more conductive than adjacent material.
 9. The method of claim8, further comprising: forming trenches in the substrate to pattern thelayer of shield into the sections of shield.
 10. The method of claim 1,further comprising: forming a first lead to a current path region of afirst pair of current path regions; and forming a second lead to anothercurrent path region of the first pair of current path regions portion,wherein the first lead is symmetric to the second lead about the planeof symmetry.
 11. The method of claim 10 further comprising: forming athird lead to a current path region of a second pair of current pathregions; and forming a fourth lead to another current path region of thesecond pair of current path regions portion, wherein the third lead issymmetric to the fourth lead about the plane of symmetry.
 12. The methodof claim 10, further comprising: coupling a center tap to a second pairof current path regions along the plane of symmetry; and coupling anexternal AC ground to the center tap.
 13. The method of claim 12,further comprising: coupling a conducting path to each of the sectionsof shield along the plane of symmetry.
 14. The method of claim 13,further comprising: coupling the conducting path to the center tap. 15.The method of claim 1, further comprising: forming current routers toselectively route current from current path regions on a first side ofthe plane of symmetry to current path regions on a second side of theplane of symmetry.
 16. The method of claim 15, wherein the method offorming each current routers further comprises: forming an overpass inthe first metal layer; coupling the overpass between a first currentpath region in a first pair of current path regions on a first side ofthe plane of symmetry and a first current path region in a second pairof current path regions on the second side of the plane of symmetry;forming an underpass in a second metal layer, the second metal layer ispositioned between the sections of shield and the first metal layer; andcoupling the underpass between a second current path region in the firstpair of current path regions on the first side of the plane of symmetryand a second current pass region in the second pair of current pathregions on the second side of the plane of symmetry.
 17. A method offorming a symmetric inducting device for an integrated circuit, themethod comprising: patterning one or more pairs of current path regionsin a main metal layer that overlays a working surface of a substrate ofan integrated circuit, wherein each pair of current path regions arepatterned to be generally symmetric about a plane of symmetry that isperpendicular to the working surface of the substrate; and formingcurrent routers having an overpass and an underpass to selectivelycouple one current path region in a pair of current path regions toanother current path region in another pair of current path regions,wherein a width of the overpass is formed narrower than the width of theunderpass to approximate resistances through the overpass and theunderpass.
 18. The method of claim 17, further comprising: coupling afirst lead to a select current path region in a pair of current pathregions on one side of the plane of symmetry; and coupling a second leadto the other select current path region of the pair of current pathregions on the other side of the plane of symmetry, wherein an ACcurrent source can be coupled across the first and second leads.
 19. Themethod of claim 17, further comprising: coupling a center tap to aselect pair of current path regions along the plane of symmetry, whereinan external AC ground can be coupled to the center tap.
 20. The methodof claim 17, wherein the current routers are formed on the plane ofsymmetry.
 21. The method of claim 17, wherein the method of forming eachcurrent router further comprises: patterning the overpass from the mainmetal layer; coupling the overpass between a first current path regionin a first pair of current path regions and first current path region ina second pair of current path regions; patterning the underpass from asecond metal layer that is positioned between the substrate and the mainmetal layer; and coupling the underpass to a second current path regionin the first pair of current path regions and a second current path inthe second pair of current path regions.
 22. The method of claim 21,wherein the width of the overpass is formed narrower than the width ofassociated current path regions coupled to the overpass and the width ofthe underpass is formed wider than the width of associated current pathregions coupled to the underpass.
 23. The method of claim 21, furthercomprising: patterning at least one pair of capacitor compensationregions for each current router from the second metal layer on oppositesides of an associated underpass to approximate the parasiticcapacitance created by the underpass; coupling one of the at least onepair of capacitor compensation regions on one side of the underpass tothe first current path region of the first pair of current path regions;and coupling a second one of the at least one pair of capacitorcompensation regions on another side of the underpass to the firstcurrent path region of the second pair of current path regions.
 24. Themethod of claim 17, further comprising: forming a shield layer ofrelatively conductive material, the shield layer is formed between themain metal layer and a second surface of the substrate that is oppositethe working surface of the substrate; and patterning the shield layer toform sections of shield that are symmetric to the plane of symmetry. 25.The method of claim 24, wherein portions of select segments of shieldare patterned perpendicular to the plane of symmetry as the portionscross the plane of symmetry.
 26. The method of claim 25, wherein some ofthe select segments of shield that have portions that are perpendicularto plane of symmetry are further patterned to have end portions thatextend from the perpendicular portions at predetermined angles.
 27. Themethod of claim 24, further comprising: coupling the sections of shieldto an external AC ground along the plane of symmetry.
 28. The method ofclaim 24, further comprising: coupling the sections of shield to a metalline along the plane of symmetry.
 29. The method of claim 28, furthercomprising: coupling the metal line to the center tap.
 30. A method offorming a symmetric inducting device for an integrated circuitcomprising: forming a shield layer; patterning the shield layer to formsections of shield that are generally symmetric to a plane of symmetry,wherein at least a mid portion of most sections of shield areperpendicular to the plane of symmetry; forming metal straps from atleast one interior metal layer, wherein the at least one interior metallayer is formed a select distance from the sections of shield; couplingtermination ends of each of the metal straps to an associated selectsection of shield, wherein each strap extends along the mid portion ofan associated select section of shield; and forming a plurality ofcurrent path regions from a main metal layer, the at least one interiormetal layer is positioned closer to the shield layer then the main metallayer, the plurality of the current path regions are generally symmetricto the plane of symmetry.
 31. The method of claim 30, wherein theplurality of current path regions are generally formed in pairs ofgenerally regular polygonal shape regions that are symmetric about theplane of symmetry.
 32. The method of claim 30, wherein metal straps arenot formed between a current path region and a section of shield. 33.The method of claim 30, wherein at least one of the metal straps isformed between a current path region and an associated section ofshield, wherein the at least one metal strap is essentially at ACground.
 34. The method of claim 30, wherein forming each metal strap forthe at least one interior metal layer further comprising: forming thetermination ends of the metal strap wider than a mid portion of themetal strap.
 35. The method of claim 30, wherein coupling thetermination ends of each metal strap further comprising: selectivelyforming vias through a layer of dielectric that overlays the sections ofshield; forming conductive contacts in the vias; and forming the metalstraps over laying the layer of dielectric, wherein the termination endsof each metal strap are coupled to an associated section of shield byassociated conductive contacts.
 36. The method of claim 30, whereinforming the layer of shield further comprises: introducing dopants intothe substrate to form a layer of shield that is more conductive thanareas directly adjacent the formed layer of shield.
 37. The method ofclaim 36, further comprising: forming trenches in the substrate topattern the layer of shield into the sections of shield.
 38. A method offorming an inductive device in an integrated circuit comprising: forminga shield layer; patterning the shield layer into segments of shield thatare symmetric about a plane of symmetry; forming a conductive halo aselect distance from the shield layer, the halo extending around anouter perimeter of the segments of shield; patterning at least one gapin the conducting halo, wherein the conducting halo is symmetric aboutthe plane of symmetry; coupling the conductive halo to each of thesections of shield; forming a main metal layer, wherein the halo ispositioned between the main metal layer and the shield layer; andpatterning the main metal layer to form at least one pair of generallyregular polygonal current path regions, wherein the at least one pair ofcurrent path regions are generally symmetric about the plane ofsymmetry.
 39. The method of claim 38, wherein two gaps are patterned inthe halo to form two sections of halo which are symmetric about theplane of symmetry.
 40. The method of claim 38, wherein the at least onegap is positioned along the plane of symmetry.
 41. The method of claim38, wherein forming the shield further comprising: introducing dopantsinto a substrate to form a shield layer that is more conductive thanadjacent material; etching trenches through the shield layer to form adesired pattern; and filling the trenches with insulating material. 42.The method of claim 38, further comprising: forming current routershaving an overpass and an underpass to selectively couple one currentpath region in a pair of current path regions to another current passregion in another pair of current path regions.
 43. The method of claim42, wherein a width of the overpass is less than the width of theunderpass to approximate similar resistances in the overpass andunderpass.
 44. A method of forming an inducting device, the methodcomprising: forming a shield layer; forming a main metal layer a selectdistance from the shield layer; patterning the main metal layer into oneor more current path regions; forming one or more current routers tocouple current path regions to each other, each current router having anoverpass and an underpass; forming one or more capacitor compensationsections for each current router; and coupling each capacitorcompensation section to an overpass of an associated current router toapproximate parasitic capacitance of an underpass of the associatedcurrent router to the shield.
 45. The method of claim 44, wherein eachcapacitor compensation section is formed generally at the same verticaldepth as the underpass of the associated current router.
 46. The methodof claim 44, wherein each capacitor compensation section is formedbetween the main metal layer and an underpass of the associated currentrouter.
 47. The method of claim 44, wherein each capacitor compensationsection is formed between an underpass of the associated current routerand the shield layer.